Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth
| Autor: | C. T. Foxon, J. B. Clegg, J. P. Gowers, R. L. S. Devine, B.A. Joyce |
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| Rok vydání: | 1987 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Band gap Superlattice General Engineering Analytical chemistry chemistry.chemical_element Heterojunction Crystal growth General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Secondary ion mass spectrometry Condensed Matter::Materials Science chemistry General Materials Science Beryllium Thin film |
| Zdroj: | Applied Physics A Solids and Surfaces. 44:195-200 |
| ISSN: | 1432-0630 0721-7250 |
| DOI: | 10.1007/bf00626423 |
| Popis: | Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a “kick-out” reaction which leads to the observed disordering of the superlattices. |
| Databáze: | OpenAIRE |
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