Simulation of charge collection probability in GaAs and Si solar cells from external quantum efficiency

Autor: Shih-Li Lin, Hung-Ruei Tseng, Chien-Chung Lin, Yin-Han Chen, Shun-Chieh Hsu
Rok vydání: 2015
Předmět:
Zdroj: 2015 International Symposium on Next-Generation Electronics (ISNE).
DOI: 10.1109/isne.2015.7132009
Popis: The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.
Databáze: OpenAIRE