Impact of Chiral Indices on the Performance of Single Electron Transistor Utilizing Carbon Nanotube Island
| Autor: | Vahideh Khademhosseini, Daryoosh Dideban, Razali Ismail, Mohammad Taghi Ahmadi |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Range (particle radiation) Materials science Band gap business.industry Coulomb blockade 02 engineering and technology Carbon nanotube Electron 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law 0103 physical sciences Coulomb Optoelectronics Current (fluid) 0210 nano-technology business Nanoscopic scale |
| Zdroj: | ECS Journal of Solid State Science and Technology. 8:M26-M29 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0041903jss |
| Popis: | The single electron transistor (SET) is a promising nanoscale device that can be utilized to increase the speed of data processing in electronic chips. It operates by transfer of few and even one electron to the island. The island material is a factor affecting on the speed of its operation. Therefore carbon nanotube (CNT) with high electron mobility can realize its fast processing speed. The CNT bandgap has indirectly proportional to its diameter and consequently its chiral indexes (n, m) presents a significant impact on the coulomb blockade (CB) range and also coulomb diamonds areas. In this research, an analytical model for the current in SET-CNT device is derived and the impact of chiral indexes on its operation is investigated. Furthermore a simulation study is carried out to report the results of the variation in CNT length and applied gate voltage on the proposed device performance. |
| Databáze: | OpenAIRE |
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