Monte Carlo simulation of hot carrier noise in shortn+nn+diodes
| Autor: | E. Starikov, Pavel Shiktorov, V Gruzinskis |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Physica Scripta. :146-150 |
| ISSN: | 1402-4896 0031-8949 |
| DOI: | 10.1088/0031-8949/1994/t54/035 |
| Popis: | The Monte Carlo method is applied to calculate the current and voltage noise in near micron n+nn+ InP diodes. Quite different behavior of the correlation functions and spectral densities of fluctuating macroscopic quantities is observed under the voltage and current driven operations. Under the constant voltage operation the time dependence of the current fluctuation correlation function exhibits damped oscillations at the transit-time and plasma frequencies. This results in appearance of two spikes in the current noise spectrum at corresponding frequencies. The transit-time oscillations and the corresponding noise are shown to be caused by the spontaneous formation of electron accumulation layers due to the negative differential resistance connected with the combined action of the velocity overshoot and Gunn-effects. In the contrast, the voltage noise spectrum is found to have a regular Lorentzian shape under the constant current operation. The observed features of the current and voltage noise spectra are shown to be in a good agreement with the frequency dependence of the small-signal admittance and impedance of the diode. |
| Databáze: | OpenAIRE |
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