Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

Autor:	Shigehiro Nishino, C. Jacob, Pirouz Pirouz, C.H. Wu, X.J. Ning
Rok vydání:	1996
Předmět:	Materials science Mineralogy Chemical vapor deposition Condensed Matter Physics Microstructure Epitaxy Inorganic Chemistry chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry Texture (crystalline) Thin film Single crystal Layer (electronics) Hexamethyldisilane
Zdroj:	Journal of Crystal Growth. 158:480-490
ISSN:	0022-0248
DOI:	10.1016/0022-0248(95)00464-5
Popis:	The morphology and microstructure of 3C-SiC thin films grown on Si(111) substrate by chemical vapor deposition at ambient pressure has been investigated. Hexamethyldisilane (HMDS) was used as the source gas and a 8% H 2 + Ar mixture as the carrier gas. SiC films were grown by one-step and two-step growth procedures. The thin films grown by these different processes were studied using optical microscopy, X-ray diffraction and transmission electron microscopy. Optimizing the one-step growth process gave a highly oriented 3C-SiC film with a [111] texture. With the two-step growth process, columnar grains were found to grow on top of a continuous single crystal layer and, under optimum growth conditions, single crystal epitaxial films could be obtained. Effects of temperature and diffusion on the characteristics of the films grown by the one-step and two-step procedures are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3df498a3ecc8ab975ab23f2dd2eaf55 https://doi.org/10.1016/0022-0248(95)00464-5 Zobrazit plný text záznamu Full Text from ScienceDirect