Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain
Autor: | Eugene Y.-J. Kong, Ran Cheng, Christelle Veytizou, Bich-Yen Nguyen, Pengfei Guo, Yee-Chia Yeo, Bin Liu, Qian Zhou, Nicolas Daval, Chunlei Zhan, Yue Yang, Daniel Delprat |
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Rok vydání: | 2013 |
Předmět: | |
Zdroj: | IEEE Transactions on Electron Devices. 60:2135-2141 |
ISSN: | 1557-9646 0018-9383 |
Popis: | We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported. |
Databáze: | OpenAIRE |
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