Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

Autor:	Eugene Y.-J. Kong, Ran Cheng, Christelle Veytizou, Bich-Yen Nguyen, Pengfei Guo, Yee-Chia Yeo, Bin Liu, Qian Zhou, Nicolas Daval, Chunlei Zhan, Yue Yang, Daniel Delprat
Rok vydání:	2013
Předmět:	Materials science business.industry Transistor Doping chemistry.chemical_element Germanium Substrate (electronics) Epitaxy Electronic Optical and Magnetic Materials law.invention chemistry CMOS law Optoelectronics Field-effect transistor Electrical and Electronic Engineering Boron business
Zdroj:	IEEE Transactions on Electron Devices. 60:2135-2141
ISSN:	1557-9646 0018-9383
Popis:	We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3d40b3fd1304e75df76872d559f6428 https://doi.org/10.1109/ted.2013.2262135 Zobrazit plný text záznamu