Identification of Generation-Recombination Centers and Traps in Virgin and Fowler-Nordheim Stressed Metal-Oxide-Semiconductor Field-Effect Transistors by Low Temperature Charge Pumping Technique

Autor:	Jen-Tai Hsu, C. R. Viswanathan
Rok vydání:	1994
Předmět:	Chemistry Transistor General Engineering Time constant Analytical chemistry General Physics and Astronomy Semiconductor device Molecular physics law.invention Stress (mechanics) Metal law visual_art visual_art.visual_art_medium Field-effect transistor NMOS logic Recombination
Zdroj:	Japanese Journal of Applied Physics. 33:683
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.33.683
Popis:	Low temperature charge pumping (CP) current measurements were carried out on 100 µm/10 µm N-channel metal-oxide-semiconductor (NMOS) transistors to investigate the interface state density. Interface states comprise traps and generation-recombination (g-r) centers. By measuring the CP current at different pulse frequencies at low temperatures, where the emission time constant of the traps is larger, the distribution of traps is determined distinct from that of the g-r centers. The formation of traps and g-r centers due to Fowler-Nordheim (F-N) injection at 77 K was studied by using this technique. It was shown that, immediately after the stress, F-N stress at 77 K creates more traps than g-r centers. When the temperature was raised to room temperature following stress at 77 K, the transformation from traps to g-r centers was observed. In alternating positive and negative F-N stress, positive F-N stress anneal out some of the traps generated during the previous negative F-N stress.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3d01d539e759db8560d4f39381bc9e8 https://doi.org/10.1143/jjap.33.683 Zobrazit plný text záznamu