Optimization of parameters, characterization and thermal property analysis of hafnium ethoxide synthesized by electrochemical method
| Autor: | Yongming Chen, Shenghai Yang, Jing He, Yan-zeng Wu, Chaobo Tang, Wang Changhong |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Vacuum distillation
Enthalpy Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Electrolyte 021001 nanoscience & nanotechnology Geotechnical Engineering and Engineering Geology Condensed Matter Physics Electrochemistry 01 natural sciences Hafnium 010309 optics Atomic layer deposition chemistry 0103 physical sciences Vaporization Materials Chemistry 0210 nano-technology Thermal analysis |
| Zdroj: | Transactions of Nonferrous Metals Society of China. 27:694-700 |
| ISSN: | 1003-6326 |
| DOI: | 10.1016/s1003-6326(17)60077-3 |
| Popis: | Hafnium ethoxide was synthesized using electrochemical method. Optimization experiments were used to optimize various parameters namely Et4NBr concentration(c): 0.01–0.06 mol/L, solution temperature (t): 30–78 °C, polar distance (D): 2.0–4.0 cm and current density (J): 100–400 A/m2. The electrolytic products obtained under optimum conditions of c=0.04 mol/L, t=78 °C, D=2.0 cm and J=100 A/m2 were further isolated by vacuum distillation under 5 kPa. The product was characterized by Fourier transform infrared (FT-IR) spectra, nuclear magnetic resonance (NMR) spectra. The results indicated that the product was hafnium ethoxide. ICP analysis suggested that the content of hafnium ethoxide in the final product exceeded 99.997%. Thermal properties of the product were analyzed by TG/DTG. The vaporization enthalpy of hafnium ethoxide was found to be 79.1 kJ/mol. The result confirmed that hafnium ethoxide was suitable for the preparation of hafnium oxide by atomic layer deposition. |
| Databáze: | OpenAIRE |
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