Interface characteristics between tungsten silicide electrodes and thin dielectrics
| Autor: | K. Pomplun, Dirk Schumann, Josef Willer, Bernhard Sell, Annette Sänger, Wolfgang H. Krautschneider |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Silicon dioxide business.industry chemistry.chemical_element Chemical vapor deposition Tungsten Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicide Electrode Optoelectronics Electrical and Electronic Engineering Metal gate business |
| Zdroj: | Microelectronic Engineering. 55:197-203 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00448-2 |
| Popis: | In today’s ULSI technology there is an increasing demand in metal electrodes for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD tungsten silicide (WSi x ) as metal electrode in conjunction with silicon dioxide (SiO 2 ) and oxidized nitride (NO). Bulk silicon and poly silicon were used as second electrode, respectively. Tungsten silicide has been used both as gate electrode and as bottom electrode. For both cases thermal stability up to 780°C with low leakage current has been shown. Band discontinuities between SiO 2 and WSi x were estimated from current–voltage measurements. |
| Databáze: | OpenAIRE |
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