Barrier-Height Imaging of Si(001) 2 × n
| Autor: | Yukio Hasegawa, Shu Kurokawa, Hiroyuki Fukumizu, Akira Sakai |
|---|---|
| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 37:3785 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.37.3785 |
| Popis: | We have carried out barrier-height imaging on clean Si(001) 2 ×1 and Ni-contaminated 2 ×n surfaces and investigated the local barrier-height variation at and around Ni-related dimer-vacancy (DV) defects which are referred to as (1+2)-DVs. The barrier-height images show atomic contrast which conforms nicely with corresponding constant-current scanning-tunneling-microscopy (STM) topographs. No strong defect-induced modification was observed in the local barrier height at (1+2)-DV. Our direct barrier-height measurements thus provide a negative result on the barrier-height reduction at (1+2)-DV, which was predicted by Ukraintsev et al. [Surf. Sci. 388 (1997) 132)]. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|