Progress and prospects of GaN-based VCSEL from near UV to green emission
| Autor: | Hui Yang, Zhi wei Zheng, Baoping Zhang, Yang Mei, Rong bin Xu, Jianping Liu, Hsin-Chieh Yu, Hao-Chung Kuo, Tien-Chang Lu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Coupling Materials science Fabrication business.industry Statistical and Nonlinear Physics 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Laser 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Vertical-cavity surface-emitting laser Quantum dot law 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology business Beam (structure) |
| Zdroj: | Progress in Quantum Electronics. 57:1-19 |
| ISSN: | 0079-6727 |
| Popis: | GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'. |
| Databáze: | OpenAIRE |
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