Numerical Simulation of the Temperature on the Metallization of an Integrated Circuit and its Impact on Interconnect Lifetime

Autor:	J. L. R. Bohorquez, R. L. de Orio, R. O. Nunes
Rok vydání:	2020
Předmět:	Interconnection Reliability (semiconductor) Materials science Computer simulation law Integrated circuit Electrical and Electronic Engineering Electromigration Reliability engineering law.invention
Zdroj:	Journal of Integrated Circuits and Systems. 15:1-5
ISSN:	1872-0234 1807-1953
DOI:	10.29292/jics.v15i2.168
Popis:	This paper demonstrates a finite element model to investigate the temperature change of the interconnects of an integrated circuit due to the power dissipation of the transistors in the substrate. The temperature of the local interconnect is more significantly affected, exhibiting an increase of 49 K and 34 K, for the Metal 1 and Metal 2, respectively. We discuss the impact of the temperature increase in the electromigration and, as a consequence in the lifetime of an operational amplifier, which demonstrates the importance of considering the metallization temperature distribution in the design stage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3c39dd0cb5c6847d3d66a09d8a814fe https://doi.org/10.29292/jics.v15i2.168 Zobrazit plný text záznamu