Virtual-Source Modeling of N-polar GaN MISHEMTS

Autor:	Nirupam Hatui, Pawana Shrestha, Haoran Li, Stacia Keller, Christian Wurm, Xun Zheng, James F. Buckwalter, Rohit R. Karnaty, Brian Romanczyk, Matthew Guidry, Umesh K. Mishra
Rok vydání:	2019
Předmět:	Materials science Passivation business.industry Transistor Gallium nitride High-electron-mobility transistor Conductivity law.invention chemistry.chemical_compound chemistry Silicon nitride law Dispersion (optics) Optoelectronics business Power density
Zdroj:	BCICTS
DOI:	10.1109/bcicts45179.2019.8972774
Popis:	Nitrogen-polar (N-polar) Gallium Nitride (GaN) deep-recess high-electron mobility transistors (HEMTs) have demonstrated exceptional power density (8 W/mm) and high efficiency at 30 and 94 GHz. Unlike the conventional Galliumpolar GaN which have typical Silicon Nitride passivation, the Npolar deep-recess structure has a GaN cap layer added in the access region of the transistor to enhance the conductivity while reducing the DC-to-RF dispersion. Previously, the MIT virtual source (VS) model has been proposed as a physics-based approach to modeling Ga-polar devices. This work investigates the application of the VS model to N-polar GaN HEMTs. We present a comparison of DC-IV between the developed model and a fabricated device to demonstrate good agreement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3bed5ae3891e8d14d525f7d160206e2 https://doi.org/10.1109/bcicts45179.2019.8972774 Zobrazit plný text záznamu