Assessing the pre-breakdown carriers' multiplication in SiC power MOSFETs by soft gamma radiation and its correlation to the Terrestrial Cosmic Rays failure rate data as measured by neutron irradiation

Autor:	Mauro Ciappa, Marco Pocaterra
Rok vydání:	2021
Předmět:	chemistry.chemical_compound Materials science chemistry Astrophysics::High Energy Astrophysical Phenomena Electric field MOSFET Silicon carbide Neutron Cosmic ray Multiplication Radiation Power MOSFET Computational physics
Zdroj:	IRPS
Popis:	The susceptibility to terrestrial cosmic rays (TCR) of power devices is strongly correlated to the peak of the local electric field, thus to the resulting local carriers' multiplication. In this paper, the soft gamma radiation from an Am241 source is used to characterize the pre-breakdown carriers' multiplication in SiC MOSFETs as a function of the applied blocking bias. The resulting multiplication levels are then compared to TCR failure rate literature data assessed by neutron irradiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3bd53c7ba74e9c0fd5cb9a03b14c3ca https://doi.org/10.1109/irps46558.2021.9405205 Zobrazit plný text záznamu