Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure

Autor:	Ann-Kuo Chu, Dershin Gan, Simon M. Sze, Yu-Ting Chen, Ming-Jinn Tsai, Jyun-Bao Yang, Hsueh-Chih Tseng, Jheng-Jie Huang, Po-Chun Yang, Ting-Chang Chang, Hui-Chun Huang
Rok vydání:	2013
Předmět:	Materials science business.industry Resistive switching Conductive filament Oxygen ions Electronic engineering Optoelectronics Forming processes Schottky diode Electrical and Electronic Engineering business Thermal conduction Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 34:226-228
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2232276
Popis:	After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission and Frenkel-Poole emission are fitted. In addition, after HTF treatment, the resistance of conductive filament decreases. The different high-resistance-state characteristics in the two devices can be attributed to more oxygen ions generated by the serious damage during HTF. Finally, the switching behavior activated by low-temperature forming process is employed to confirm the model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3b509e48af9b87a4f7c4d30078c1259 https://doi.org/10.1109/led.2012.2232276 Zobrazit plný text záznamu