Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers

Autor:	D. E. Mars, Scott W. Corzine, Gloria E Hofler, Ashish Tandon, Mariano Troccoli, Federico Capasso, David P. Bour
Rok vydání:	2004
Předmět:	business.industry Chemistry Condensed Matter Physics Laser Epitaxy law.invention Inorganic Chemistry Optics law Cascade Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Growth rate Thin film business Quantum cascade laser Current density
Zdroj:	Journal of Crystal Growth. 272:526-530
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.08.048
Popis:	We have grown 30-stage AlInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vapor-phase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1 nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8 kA/cm 2 , a lasing wavelength of 7.6 μm, and a peak power of 150 mW. CW operation was achieved up to a temperature of 180 K. These characteristics compare favorably with MBE-grown QC lasers of similar structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3af5dbd72074e05b792fc40cfb1a747 https://doi.org/10.1016/j.jcrysgro.2004.08.048 Zobrazit plný text záznamu Full Text from ScienceDirect