Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistors
| Autor: | Ian D. French, John Richard Hughes, M. J. Powell |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Amorphous silicon
Materials science Condensed matter physics Dangling bond Oxide Nitride equipment and supplies Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Thin-film transistor Metastability Materials Chemistry Ceramics and Composites Silicon oxide |
| Zdroj: | Journal of Non-Crystalline Solids. 114:642-644 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(89)90676-5 |
| Popis: | We compare the characteristics of a-Si:H TFTs made using silicon nitride and silicon oxide gate insulators, and then determine the energy distribution of states in the amorphous silicon band -gap. We also subject the transistors to positive and negative bias-stress, which creates new states in the gap. We find the majority of intrinsic deep states occur at a higher energy for oxide transistors than for nitride transistors. We also find that the metastable states induced by positive bias-stress occur at a higher energy than those induced by negative bias-stress. The results are consistent with the defect pool model for the Si dangling bond states. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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