Conduction-Electron Spin Resonance in HgSe Crystals
| Autor: | V. I. Okulov, L. D. Paranchich, M. D. Andriichuk, I. V. Kochman, A. I. Veinger |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Spins Field (physics) business.industry Resonance Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Thermal conduction 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor Impurity 0103 physical sciences Condensed Matter::Strongly Correlated Electrons 010306 general physics business Spin (physics) |
| Zdroj: | Semiconductors. 52:1672-1676 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618130225 |
| Popis: | Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical. |
| Databáze: | OpenAIRE |
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