Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

Autor:	Hao-Chung Kuo, Wei-Wen Chan, Shih-Chun Ling, Huei Min Huang, Chiao-Yun Chang, Shing-Chung Wang, Tien-Chang Lu
Rok vydání:	2011
Předmět:	Materials science business.industry Wide-bandgap semiconductor Gallium nitride Polarization (waves) Epitaxy Indium gallium nitride Atomic and Molecular Physics and Optics chemistry.chemical_compound Nanolithography chemistry Stress relaxation Optoelectronics Nanorod business
Zdroj:	Journal of Lightwave Technology. 29:2761-2765
ISSN:	1558-2213 0733-8724
DOI:	10.1109/jlt.2011.2164896
Popis:	Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 × 10-2 to 2.58 × 10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
Databáze:	OpenAIRE
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