Atomistic simulation of free transverse vibration of graphene, hexagonal SiC, and BN nanosheets
| Autor: | Thanh-Lam Bui, Minh-Quy Le, Hai-Le Bui, Danh-Truong Nguyen |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Hexagonal crystal system Graphene Mechanical Engineering Computational Mechanics 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Finite element method law.invention chemistry.chemical_compound Molecular dynamics chemistry Transverse vibration Boron nitride law 0103 physical sciences Silicon carbide Boundary value problem Composite material 0210 nano-technology |
| Zdroj: | Acta Mechanica Sinica. 33:132-147 |
| ISSN: | 1614-3116 0567-7718 |
| Popis: | Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet’s size. Graphene exhibits the highest natural frequencies, and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study. |
| Databáze: | OpenAIRE |
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