Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm High Performance Logic CMOS SOI Technologies
| Autor: | Torben Kelwing, Andreas Naumann, Martin Trentzsch, Sergej Mutas, Bernhard Trui, Lutz Herrmann, Falk Graetsch, Christoph Klein, Lutz Wilde, Susanne Ohsiek, Martin Weisheit, Anita Peeva, Inka Richter, Hartmut Prinz, Alexander Wuerfel, Rick Carter, Rolf Stephan, Peter Kücher, Walter Hansch |
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| Rok vydání: | 2010 |
| Zdroj: | ECS Meeting Abstracts. :1484-1484 |
| ISSN: | 2151-2043 |
| Popis: | not Available. |
| Databáze: | OpenAIRE |
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