Carrier concentration profiles in Si‐doped liquid‐phase epitaxial Ga1−xAlxAs

Autor:	W. G. Rado, W. J. Johnson, R. L. Crawley, J. E. Amey
Rok vydání:	1973
Předmět:	Materials science Dopant Analytical chemistry Si doped General Physics and Astronomy Liquid phase Substrate (electronics) Epitaxy
Zdroj:	Journal of Applied Physics. 44:1311-1315
ISSN:	1089-7550 0021-8979
Popis:	The variation of carrier concentration with growth temperature in Si‐doped Ga1−xAlxAs has been investigated as a function of the Al, As, and Si initial solution concentrations and the substrate's orientation for growth. Although all of the above parameters influence the temperature at which Si changes from an n‐ to p‐type dopant, the temperature dependence of the carrier concentration profile was found to depend only upon the Si solution concentration and upon the substrate's orientation for growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e3510422b610cd928fdb3d925f7f3ea2 https://doi.org/10.1063/1.1662346 Zobrazit plný text záznamu