Interface effect of oxygen doping in polythiophene
| Autor: | Hsin-Fei Meng, Sheng-fu Horng, Hua Hsien Liao, Chia Ming Yang, Chien Cheng Liu, Wen Hsing Liu |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Doping Transistor Gate dielectric Metals and Alloys Substrate (electronics) Condensed Matter Physics Dip-coating Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Thin-film transistor Polymer chemistry Materials Chemistry Optoelectronics Polythiophene business Porosity |
| Zdroj: | Synthetic Metals. 159:1131-1134 |
| ISSN: | 0379-6779 |
| Popis: | Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm 2 /V s and on–off ratio of 29,000 are obtained for dip-coated film on glass substrate. |
| Databáze: | OpenAIRE |
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