Charged defects on Ge(111)-c(2×8): characterization using STM
| Autor: | Geunseop Lee, Roy F. Willis, Ilya Chizhov, H. Mai |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Brightness
Materials science Semiconductor materials chemistry.chemical_element Charge (physics) Germanium Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films Characterization (materials science) law.invention Crystallography Delocalized electron chemistry law Materials Chemistry Scanning tunneling microscope Quantum tunnelling |
| Zdroj: | Surface Science. 463:55-65 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(00)00596-3 |
| Popis: | We have studied various defects present on the Ge(111)- c (2×8) surface using scanning tunneling microscopy (STM). Images at different bias-voltages reveal defects that appear as voltage-dependent variations in brightness. Empty-state images, in particular, taken with low bias voltages show characteristic delocalized brightness variation around some defects. These particular defects have a net charge relative to the clean, unperturbed Ge(111)- c (2×8) surface. We identify various types of defects and describe their charge states. This unique observation of a delocalized variation in the images of Ge(111)- c (2×8) is attributed to the various charged defects allied to poor surface screening of this semiconducting surface. |
| Databáze: | OpenAIRE |
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