Retention Characteristics of Zero-capacitor RAM (Z-RAM) cell based on FinFET and Tri-Gate devices

Autor:	M. Gostkowski, Klaus Schruefer, Weize Xiong, P. Patruno, C. Maleville, Serguei Okhonin, Cedric Bassin, C.R. Cleavelin, P. Fazan, T. Schulz, Mikhail Nagoga
Rok vydání:	2006
Předmět:	Millisecond Hardware_MEMORYSTRUCTURES Materials science business.industry Electrical engineering Zero (complex analysis) Hardware_PERFORMANCEANDRELIABILITY law.invention Capacitor CMOS law MOSFET Hardware_INTEGRATEDCIRCUITS Z-RAM Non-volatile random-access memory business Dram Computer hardware
Zdroj:	2005 IEEE International SOI Conference Proceedings.
DOI:	10.1109/soi.2005.1563588
Popis:	In this paper we experimentally study for the first time the retention characteristics of Z-RAM cells based on CMOS FinFET and tri-gate devices. A retention time of few milliseconds is measured at room temperature on 100 nm devices. This FinFET based Z-RAM memory will allow manufacturing of very low cost DRAMs and eDRAMs for 45 and sub 45-nm generations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e316f71c26a4dec9bf97f2fbb2c53888 https://doi.org/10.1109/soi.2005.1563588 Zobrazit plný text záznamu