Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process
| Autor: | Jia-Min Shieh, Yann Wen Lan, Arumugam Manikandan, Yu Ze Chen, Shin Hung Tsai, Kang L. Wang, Ali Javey, Henry Medina, Teng Yu Su, Chia Wei Chen, Yu-Lun Chueh, Stuart R. Thomas, Jian Hua Yang, Xiaodan Zhu, Wei Sheng Lin, Heh-Nan Lin, Bo Wei Wu, Shao Hsin Lee, Jian Guang Li, Yu Chuan Shih, Aryan Navabi, Chang Hong Shen |
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| Rok vydání: | 2017 |
| Předmět: |
Electron mobility
Materials science General Chemical Engineering Oxide Nanotechnology 02 engineering and technology 010402 general chemistry 01 natural sciences chemistry.chemical_compound symbols.namesake Transition metal X-ray photoelectron spectroscopy Materials Chemistry Wafer business.industry General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Semiconductor Chemical engineering chemistry symbols Inductively coupled plasma 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Chemistry of Materials. 29:1587-1598 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/acs.chemmater.6b04467 |
| Popis: | An inductively coupled plasma (ICP) process was used to synthesize transition metal dichalcogenides (TMDs) through a plasma-assisted selenization process of metal oxide (MOx) at a temperature as low as 250 °C. In comparison with other CVD processes, the use of ICP facilitates the decomposition of the precursors at low temperatures. Therefore, the temperature required for the formation of TMDs can be drastically reduced. WSe2 was chosen as a model material system due to its technological importance as a p-type inorganic semiconductor with an excellent hole mobility. Large-area synthesis of WSe2 on polyimide (30 × 40 cm2) flexible substrates and 8 in. silicon wafers with good uniformity was demonstrated at the formation temperature of 250 °C confirmed by Raman and X-ray photoelectron (XPS) spectroscopy. Furthermore, by controlling different H2/N2 ratios, hybrid WOx/WSe2 films can be formed at the formation temperature of 250 °C confirmed by TEM and XPS. Remarkably, hybrid films composed of partially reduced... |
| Databáze: | OpenAIRE |
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