Quality control and authentication of packaged integrated circuits using enhanced-spatial-resolution terahertz time-domain spectroscopy and imaging
| Autor: | Navid Asadizanjani, Sina Shahbazmohamadi, Kiarash Ahi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Point spread function
Materials science business.industry Terahertz radiation Mechanical Engineering 02 engineering and technology Integrated circuit 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Metrology 010309 optics Optics law 0103 physical sciences Deconvolution Electrical and Electronic Engineering 0210 nano-technology business Terahertz time-domain spectroscopy Image resolution Gaussian beam |
| Zdroj: | Optics and Lasers in Engineering. 104:274-284 |
| ISSN: | 0143-8166 |
| DOI: | 10.1016/j.optlaseng.2017.07.007 |
| Popis: | In this paper, a comprehensive set of techniques for quality control and authentication of packaged integrated circuits (IC) using terahertz (THz) time-domain spectroscopy (TDS) is developed. By material characterization, the presence of unexpected materials in counterfeit components is revealed. Blacktopping layers are detected using THz time-of-flight tomography, and thickness of hidden layers is measured. Sanded and contaminated components are detected by THz reflection-mode imaging. Differences between inside structures of counterfeit and authentic components are revealed through developing THz transmission imaging. For enabling accurate measurement of features by THz transmission imaging, a novel resolution enhancement technique (RET) has been developed. This RET is based on deconvolution of the THz image and the THz point spread function (PSF). The THz PSF is mathematically modeled through incorporating the spectrum of the THz imaging system, the axis of propagation of the beam, and the intensity extinction coefficient of the object into a Gaussian beam distribution. As a result of implementing this RET, the accuracy of the measurements on THz images has been improved from 2.4 mm to 0.1 mm and bond wires as small as 550 µm inside the packaging of the ICs are imaged. |
| Databáze: | OpenAIRE |
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