Physics of Switching and Memory Effects in Chalcogenides

Autor:	K. D. Tsendin
Rok vydání:	2014
Předmět:	Physics Threshold current Condensed matter physics business.industry Chalcogenide Nanotechnology GeSbTe Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Threshold voltage Exponential function chemistry.chemical_compound Semiconductor chemistry Tunnel ionization business Ohmic contact
Zdroj:	Universal Journal of Physics and Application. 8:53-59
ISSN:	2331-6543 2331-6535
DOI:	10.13189/ujpa.2014.020201
Popis:	A review of the main experimental features of switching and memory effects in chalcogenide glassy semiconductors (CGS), review and analyze of the models of these phenomena was done. An electronic-thermal model of the switching effect taking into account multiphonon tunnel ionization of negative-U centers and heating is presented. The model fits experimental current-voltage characteristics of a GeSbTe films both in ohmic and exponential regions. Also the model is in good agreement with experimental dependences of threshold voltage and threshold current on temperature and thickness. This indicates that multiphonon tunnel ionization of negative-U centers and heating is the most probable mechanism of the switching effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e308096f83fd2941ad2f4bf2ff3ca5f9 https://doi.org/10.13189/ujpa.2014.020201 Zobrazit plný text záznamu