Determination of the effective channel thickness of the MESFETs based on transconductance parameter beta measurement
| Autor: | B.-J. Moon, M.J. Helix |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Transconductance Velocity saturation Electronic Optical and Magnetic Materials Gallium arsenide Threshold voltage chemistry.chemical_compound Ion implantation chemistry Beta (plasma physics) Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Communication channel |
| Zdroj: | IEEE Transactions on Electron Devices. 40:32-34 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.249420 |
| Popis: | A method for extracting the effective channel thickness of MESFETs fabricated in fully ion-implanted processes is proposed. This method is based on the measurement of the transconductance parameter beta . Since the expression for beta includes the velocity saturation effect, the extracted effective channel thickness is comparable to simulation results. This method allows convenient extraction of the effective channel thickness of fully implanted MESFETs. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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