Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors

Autor:	V. D. Shadrin, F. L. Serzhenko, V. T. Coon
Rok vydání:	1994
Předmět:	Materials science Physics::Instrumentation and Detectors business.industry Detector Exchange interaction Photodetector Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Responsivity Optoelectronics Quantum efficiency business Quantum well infrared photodetector Quantum well Dark current
Zdroj:	MRS Proceedings. 299
ISSN:	1946-4274 0272-9172
Popis:	The theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2f8e2d694a38429ae4a0d13a8f80f5e https://doi.org/10.1557/proc-299-273 Zobrazit plný text záznamu Full text from SpringerLink