Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks
| Autor: | Martina Schulte-Borchers, Charlotte Rothfuchs, Henri Ivanov Boudinov, Hans Hofsäss, Tristan Koppe, Ulrich Vetter |
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| Rok vydání: | 2014 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Materials science Proton Physics::Instrumentation and Detectors business.industry Mechanical Engineering Monte Carlo method Analytical chemistry 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Proton beam writing Computer Science::Other Ion Recoil 0103 physical sciences Optoelectronics Irradiation Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Microelectromechanical Systems. 23:955-960 |
| ISSN: | 1941-0158 1057-7157 |
| Popis: | We model the electrochemical etching rates of p-type GaAs after proton irradiation using a finite element simulation with input from Monte Carlo simulations of the recoil distribution together with defect to conductivity mapping of implantation isolation data taken from literature. The simulations will allow for the design of advanced microelectromechanical systems through proton beam writing and subsequent electrochemical etching using multiple ion fluences as the novel technique for three-dimensional microstructuring. |
| Databáze: | OpenAIRE |
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