| Autor: |
L. Pescini, B. Cronquist, Danny Pak-Chum Shum, Sung-Rae Kim, Martin Stiftinger, N. Chan, Ben Leung, Volker Hecht, Armin Tilke, R. Kakoschke, Kyung Joon Han |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
CICC |
| DOI: |
10.1109/cicc.2007.4405688 |
| Popis: |
A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) operation. The IPW allows the Fowler-Nordheim (FN) Uniform Channel Program and Erase (UCPE) with less than plusmn10 V. Additionally, the IPW approach allows a greater flexibility in the array bias scheme reducing the gate disturb during programming and eliminating all Gate-Induced Drain Leakage (GIDL) conditions. Characterization of a FPGA cell and 0.5 Mbit array with 90 nm design rules is demonstrated with excellent electrical characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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