Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue

Autor:	Jiahui Duan, Shujing Zhao, Fengbin Tian, Jinjuan Xiang, Kai Han, Tingting Li, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:6547-6551
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3215935
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2e3eeaa8ecc5649034ae21392dc0611 https://doi.org/10.1109/ted.2022.3215935 Zobrazit plný text záznamu