Low hydrogen content silicon nitride films from electron cyclotron resonance plasmas

Autor:	R. L. Pfeffer, J. R. Flemish
Rok vydání:	1993
Předmět:	chemistry.chemical_compound Silicon nitride chemistry Hydrogen Ellipsometry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Dielectric Thin film Total pressure Rutherford backscattering spectrometry Electron cyclotron resonance
Zdroj:	Journal of Applied Physics. 74:3277-3281
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.355318
Popis:	The material and electrical properties of SiNx:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an electron cyclotron resonance reactor have been evaluated. Deposition rate, refractive index, and stoichiometry have been determined using ellipsometry, Rutherford backscattering spectrometry, and infrared spectroscopy. Current‐voltage and dielectric breakdown characteristics have been measured on metal‐insulator‐silicon structures. Stoichiometric material with a hydrogen content of 1.5 at. % is created using a ratio of SiH4/N2=0.003, P=2 mTorr, T=250 °C, and power=650 W. Hydrogen levels are reduced by using lower ratios of SiH4/N2, lower total pressure, or higher microwave power. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content. The low‐field resistivity of these films is largely independent of the process parameters over the range investigated. The dielectric breakdown strength is significantly greater in films deposited a...
Databáze:	OpenAIRE
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