Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition

Autor:	Taibun Kamejima, Naoki Furuhata, Koichi Kakimoto, Yoshida Masaji
Rok vydání:	1988
Předmět:	Electron mobility chemistry.chemical_compound Van der Pauw method Silicon Dopant Chemistry Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Disilane Atmospheric temperature range
Zdroj:	Journal of Applied Physics. 64:4692-4695
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.341253
Popis:	Heavily Si‐doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low‐temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si‐doped GaAs is usually saturated at 6×1018 cm−3 level. Further, Si doping makes the carrier concentration decrease. By using the low‐temperature FTIR method, absorption bands for SiGa, SiAs, SiGa‐SiAs pair, and lower energy bands (374 and 369 cm−1) were observed in heavily Si‐doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm−1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si‐doped GaAs, a part o...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2dde5a1c26c2be8ae60e586bfde7ad3 https://doi.org/10.1063/1.341253 Zobrazit plný text záznamu