Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy

Autor:	I.C.W. Chan, M. Elouneg-Jamroz, M. Beaudoin, Thomas Tiedje, Jeff F. Young, N. Zangenberg, Daniel A. Beaton, Erin C. Young, Michael Whitwick
Rok vydání:	2009
Předmět:	Absorption spectroscopy Chemistry Band gap business.industry Analytical chemistry Nitride Condensed Matter Physics Spectral line Inorganic Chemistry Absorption edge Materials Chemistry Optoelectronics Thin film Spectroscopy business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 311:1662-1665
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2008.11.068
Popis:	The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2c2c3beba68f81b0a87079afc7a7a9f https://doi.org/10.1016/j.jcrysgro.2008.11.068 Zobrazit plný text záznamu Full Text from ScienceDirect