Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry

Autor:	Robert W. Collins, M. Wakagi, H. V. Nguyen, Yiwei Lu, C.R. Wronski, Ilsin An
Rok vydání:	1994
Předmět:	Amorphous silicon Materials science Physics and Astronomy (miscellaneous) Silicon Hydrogen business.industry Nucleation chemistry.chemical_element law.invention chemistry.chemical_compound Crystallography Microcrystalline chemistry law Optoelectronics Crystallite Crystallization Thin film business
Zdroj:	Applied Physics Letters. 65:3335-3337
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.113024
Popis:	The etching of hydrogenated amorphous silicon (a‐Si:H) in thermally generated atomic hydrogen has been investigated in detail, utilizing real time spectroellipsometry for characterization and end‐point detection. When properly controlled, etching can yield ultrathin microcrystalline Si (μc‐Si:H) films of relatively high density on virtually any substrate material. These films are unique in that their microstructure is established by the crystallization of the near‐surface a‐Si:H, rather than by the nucleation of crystallites on the substrate, as occurs for plasma‐enhanced chemical vapor‐deposited μc‐Si:H films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2c117b24f4695a7aa74407de0a8b4ce https://doi.org/10.1063/1.113024 Zobrazit plný text záznamu