Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*
| Autor: | Robert W. Martin, M. V. Yakushev, A. V. Mudryi, A. V. Karotki, F. Luckert |
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| Rok vydání: | 2010 |
| Předmět: |
Photoluminescence
Materials science business.industry Analytical chemistry chemistry.chemical_element Heterojunction Condensed Matter Physics Copper indium gallium selenide solar cells Copper chemistry Electron beam processing Optoelectronics Photoluminescence excitation Thin film business Spectroscopy Indium |
| Zdroj: | Journal of Applied Spectroscopy. 77:668-674 |
| ISSN: | 1573-8647 0021-9037 |
| DOI: | 10.1007/s10812-010-9385-6 |
| Popis: | Thin films of Cu(In, Ga)Se2 (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (Eg) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P1 at ~0.91 eV and P2 at ~0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (CuIn) and indium vacancies VIn, respectively, as the simplest radiation-induced defects. |
| Databáze: | OpenAIRE |
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