Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
| Autor: | R. A. Yankov, Jörg Pezoldt, Wolfgang Skorupa, W. Anwand, V. Heera, Paul G. Coleman, G. Brauer, M. Voelskow |
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| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Defect Recognition and Image Processing in Semiconductors 1997 |
| Databáze: | OpenAIRE |
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