Photoluminescence Properties of ZnO Thin Films Grown by Electrochemical Deposition
| Autor: | Masaaki Nakayama, DaeGwi Kim, Isamu Tanaka, Toru Terashita |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Condensed Matter::Other business.industry Exciton General Engineering Physics::Optics General Physics and Astronomy Thermal treatment Inelastic scattering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Optoelectronics Photoluminescence excitation Thin film business Excitation Deposition (law) |
| Zdroj: | Japanese Journal of Applied Physics. 42:L935-L937 |
| ISSN: | 0021-4922 |
| DOI: | 10.1143/jjap.42.l935 |
| Popis: | We have investigated the photoluminescence properties of ZnO thin films grown by electrochemical deposition. By applying a thermal treatment at 500°C in O2 atmosphere, a free-exciton photoluminescence is observed. Furthermore, under high-density excitation conditions, a photoluminescence band appears on the low-energy side of the free exciton. The photoluminescence intensity exhibits an almost quadratic dependence on the excitation power, and the energy spacing between the photoluminescence band and the free exciton is almost equal to the exciton binding energy of ZnO. We conclude from the above results that the photoluminescence band under high-density excitation conditions originates from an inelastic scattering process of excitons, the so-called P emission. |
| Databáze: | OpenAIRE |
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