Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and Inverters
| Autor: | You Meng, Ao Liu, Caixuan Fan, Fukai Shan, Zidong Guo, Guoxia Liu |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Oxide Electrical engineering chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Capacitance Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Thin-film transistor 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Thin film 0210 nano-technology business Strontium oxide Current density Indium |
| Zdroj: | IEEE Transactions on Electron Devices. 64:4137-4143 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2742060 |
| Popis: | In this paper, high-k strontium oxide (SrOx) dielectric thin films were fabricated using simple and low-cost solution process. The formation and properties of SrOx thin films annealed at various temperatures (400 °C, 500 °C, 600 °C, and 700 °C) were investigated using numbers of characterization techniques. The electrical analysis indicates that the insulating properties of SrOx thin films were improved with increasing annealing temperature. The post-annealing at temperatures higher than 400 °C enables the SrOx thin film, exhibiting low-leakage current density of ~10−8 A cm−2 at 3 V and the areal capacitance larger than 350 nF cm−2 at 20 Hz. To further explore the possible applications of solution-processed high-k SrOx thin films for thin-film transistors (TFTs), the indium oxide (In2O3) TFTs based on SrOx thin films were integrated for testing. The optimized In2O3/SrOx TFT exhibits high performance with an average field-effect mobility of 5.61 cm2 V−1 s−1, a small subthreshold swing of 110 mV dec−1, and a large on/off current ratio of 107. To demonstrate the potential of In2O3/SrOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 9.7. Importantly, all these device parameters were obtained at an ultralow operating voltage of 3 V, which represents a step toward portable, battery-driven, and low-power consumption electronics and circuits. |
| Databáze: | OpenAIRE |
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