Autor: K. Žďánský, I. D. Hawkins
Rok vydání: 1999
Předmět:
Zdroj: Czechoslovak Journal of Physics. 49:813-821
ISSN: 0011-4626
DOI: 10.1023/a:1021297325747
Popis: Capacitance decay after termination of light was measured on Alx Ga1 −xAs/GaAs heterostructures with p-n junctions. It has been shown that the decay can be well expressed by two curves of stretched exponential forms; exp[−(t/τ)β]. The temperature dependence of the characteristic timeτ of each of the two curves was determined in the range from 15K to 60K. The dependence follows the theoretical relation for electron capture dominated by tunneling via multiphonon emission. The estimated capture parameters show a strong electron-phonon coupling of two DX centers. Possible relation of these centers to tin is discussed.
Databáze: OpenAIRE