Dry etch improvements in the SOI wafer flow process for IPL stencil mask fabrication
| Autor: | Reinhard Springer, Mathias Irmscher, Christian Reuter, Jörg Butschke, Florian Letzkus, B. Höfflinger, Josef Mathuni, Albrecht Ehrmann |
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| Rok vydání: | 2000 |
| Předmět: |
Fabrication
Materials science business.industry Silicon on insulator Condensed Matter Physics Stencil Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etch pit density Trench Forensic engineering Optoelectronics Wafer Dry etching Electrical and Electronic Engineering business Lithography |
| Zdroj: | Microelectronic Engineering. 53:609-612 |
| ISSN: | 0167-9317 |
| Popis: | The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm and a thickness of 3μm. Results of a new sub-quarter micron trench etch and membrane dry etch process are presented and discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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