Gated Hall and field-effect transport characterization of e-mode ZnO TFTs
| Autor: | Jason Anders, Michael L. Schuette, T. Cooper, M. Streby, Marian K. Kazimierczuk, Nicholas C. Miller, Kevin D. Leedy |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Doping Field effect 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Safe operating area Semiconductor Stack (abstract data type) law Hall effect 0103 physical sciences Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Applied Physics Letters. 116:252105 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0009676 |
| Popis: | Two methods of measuring the electronic transport properties of a material are transistor DC-voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can be done by electrostatic doping to lower resistance in the channel. We show that by measuring both, we can compare any value (raw measured as well as calculated data) directly to any other value along an index of FET gate and drain voltage across the entire safe operating area of the device. Our gated Hall technique intrinsic calculations of Hall mobility, typically possible only for bulk or doped materials, for thin-film transistor materials stack up with thickness scaled to practical values. |
| Databáze: | OpenAIRE |
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