Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situ doped Si0.7Ge0.3
| Autor: | Mehmet C. Öztürk, G. Harris, D. T. Grider, Dennis M. Maher, Stanton P. Ashburn, Jimmie J. Wortman |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Doping Analytical chemistry chemistry.chemical_element Germanium Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electrical and Electronic Engineering p–n junction Boron |
| Zdroj: | Journal of Electronic Materials. 24:1369-1376 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02655450 |
| Popis: | In this paper, a novel raised p+−n junction formation technique is presented. The technique makes use ofin- situ doped, selectively deposited Si0.7Ge0.3 as a solid diffusion source. In this study, the films were deposited in a tungsten halogen lamp heated cold-walled rapid thermal processor using SiCl2H2, GeH4, and B2H6. The microstructure of the Si0.7Ge0.3 layer resembles that of a heavily defected epitaxial layer with a high density of misfit dislocations, micro-twins, and stacking faults. Conventional furnace annealing or rapid thermal annealing were used to drive the boron from thein- situ doped Si0.7Ge0.3 source into silicon to form ultra-shallow p+−n junctions. Segregation at the Si0.7Ge0.3/Si interface was observed resulting in an approximately 3:1 boron concentration discontinuity at the interface. Junction profiles as shallow as a few hundred angstroms were formed at a background concentration of 1017 cm−3. |
| Databáze: | OpenAIRE |
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