In Situ Formation of Interfacial Defects between Co-Based Spinel/Carbon Nitride Hybrids for Efficient CO2 Photoreduction
| Autor: | H. T. Ma, Yaxuan Li, Penglei Wang, Lianzhou Wang, Meichun Qin, Shiying Fan, Zhifan Yin, Guoqiang Gan, Xinyong Li |
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| Rok vydání: | 2020 |
| Předmět: |
Work (thermodynamics)
Materials science Spinel Energy Engineering and Power Technology chemistry.chemical_element Charge (physics) Heterojunction engineering.material Oxygen chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry Electrochemistry Photocatalysis engineering Chemical Engineering (miscellaneous) Density functional theory Electrical and Electronic Engineering Carbon nitride |
| Zdroj: | ACS Applied Energy Materials. 3:5083-5094 |
| ISSN: | 2574-0962 |
| DOI: | 10.1021/acsaem.0c00881 |
| Popis: | Constructing efficient photocatalysts for CO conversion and synthesis of valuable chemical fuels has been one of the most promising strategies and challenge for both energy crisis and greenhouse gas control. In this study, an interfacial defect in the Co-based spinel/carbon nitride direct Z-scheme heterojunction (CoO/CNS) with ultrahigh charge transfer efficiency was successfully constructed by in situ electrostatic assembly between g-CN nanosheets and a hollow spherical CoO. Compared to pure g-CN nanosheets, the constructed heterojunction CoO/CNS-10% shows a highly advanced photocatalytic capability with approximately 11.5 and 6.4 times in the CO evolution rate (13.31 μmol·g·h) and CH generation rate (3.17 μmol·g·h), respectively. Additionally, both experimental observations and density functional theory calculations reveal that the oxygen vacancies could form spontaneously in the interface, which play a great role in not only driving oriented interface charge transfer through acting as interface charge recombination centers but also improving CO molecule adsorption and activation in a sense. This work would not only provides deep insights into the heterojunction construction for highly photocatalytic performance promotion but also emphasizes the importance of interfacial defect engineering in effectively controllable interface charge transfer. |
| Databáze: | OpenAIRE |
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