Semiconductor Lateral Spin Device with Half-Metallic Ferromagnet Electrodes
| Autor: | Alexey O. Shorikov, N. A. Viglin, V. M. Tsvelikhovskaya, S. V. Naumov, T. N. Pavlov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Solid-state physics Condensed matter physics Spin polarization Condensed Matter::Other business.industry Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Ferromagnetism 0103 physical sciences Electrode Condensed Matter::Strongly Correlated Electrons 010306 general physics Polarization (electrochemistry) Spin (physics) business |
| Zdroj: | Physics of the Solid State. 62:2301-2304 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783420120318 |
| Popis: | In a semiconductor spin device with electrodes formed from the Fe2NbSn half-metallic ferromagnet film, a spin polarization of PS = 4% of electrons injected into the InSb semiconductor has been obtained. This corresponds to the maximum possible PS value for transparent contacts of a semiconductor and a ferromagnet, in which the polarization is PF = 95%. It is shown that, to ensure the effective injection of spin-polarized electrons from a ferromagnet into a semiconductor, it is necessary to use a ferromagnet with the 100% electron polarization or to form an additional high-resistance layer in the interface. |
| Databáze: | OpenAIRE |
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