Growth Condition Dependence Of Rheed Pattern From GaAs (111)B Surface

Autor:	Weidan Li, B. K. Laurich, Darryl L. Smith, Q.F. Xiao, K. Yang, A. P. Taylor, L. J. Schowalter
Rok vydání:	1991
Předmět:	Crystal Crystallography Reflection high-energy electron diffraction Materials science Electron diffraction Surface roughness Substrate (electronics) Epitaxy Molecular physics Molecular beam epitaxy Phase diagram
Zdroj:	MRS Proceedings. 228
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-228-261
Popis:	A 3-dimensional phase diagram is introduced to describe the dependence of the RHEED pattern from GaAs(111)B surface on growth conditions. The 2×2, transitional(1×1), and √19×,√19 surface reconstructions correspond to different zones in the phase diagram. A equation is given for the planes that separate these zones, which fit experimental data well. Homoepitaxial films on GaAs(111)B grown in the 2×2 region generally have bad crystal quality as determined by the ion channeling, and growth in the √19×√19 region generally yields rough surface morphology. At higher substrate temperatures (∼ 650 °C), featureless films with minimum ion channeling yields of less than 4% are achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e270890a8c68ed0235c340780036fd43 https://doi.org/10.1557/proc-228-261 Zobrazit plný text záznamu Full text from SpringerLink