Admittance spectra of silicon photocells in dark mode
| Autor: | A. V. Blank, N. A. Suhareva |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Admittance
Materials science Silicon business.industry Photoresistor Metals and Alloys chemistry.chemical_element Heterojunction Biasing Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Inductance chemistry law Optoelectronics Electrical and Electronic Engineering Nyquist plot business Instrumentation Common emitter |
| Zdroj: | Sensors and Actuators A: Physical. 331:112909 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2021.112909 |
| Popis: | An extended model of silicon photovoltaic cells with localized parameters is presented, including inductance in a series branch. Based on the recorded admittance-frequency spectra, the dependences of the active and reactive components from the bias voltage for PERC (Passivated Emitter Rear Cell), HIT (Heterojunction with Intrinsic Thin-layer solar cells) and IBC (Interdigitated Back Contact cells) elements are reconstructed. The structure of the Nyquist diagrams for the components of admittance spectra is analyzed, which make it possible to visually determine the working scheme of the chain based on the elementary links of the first and second orders. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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