Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs
| Autor: | Yuehang Xu, Zhang Wen, Kai Lu, Yong-Xin Guo, Andong Huang, Yonghao Jia |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Wide-bandgap semiconductor 020206 networking & telecommunications Gallium nitride 02 engineering and technology Trapping 01 natural sciences Buffer (optical fiber) Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound chemistry Inflection point Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Current (fluid) business |
| Zdroj: | IEEE Transactions on Electron Devices. 65:3169-3175 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2849501 |
| Popis: | In this paper, the buffer-related current collapse (CC) in AlGaN/GaN HEMTs is investigated by using pulsed I–V measurements and 2-D drift-diffusion simulations. The simulation results indicate that the negative potential (NP), appearing in the Fe-doped buffer under the gate, is found to account for the CC. The NP will induce threshold voltage shifts, in which an inflection point (IP) of the threshold voltage is found. It could be revealed in pulsed I–V characteristics which are significant to depict trapping effect when building a compact large-signal model. The formation mechanism of the IP is detailed. In the end, a simple threshold voltage model is proposed for verification. |
| Databáze: | OpenAIRE |
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